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Inchange Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION With TO-3PML package High voltage ,high speed switching APPLICATIONS 2SC4297 For switching regulator and general purpose applications PINNING PIN 1 2 3 Base Collector Fig.1 simplified outline (TO-3PML) and symbol Emitter DESCRIPTION Absolute maximum ratings(Ta=25ae ) SYMBOL VCBO VCEO VEBO IC ICM IB PC Tj Tstg Collector-base voltage PARAMETER Collector-emitter voltage INC Emitter-base voltage Collector current E SEM ANG H Open base TC=25ae Open emitter OND IC CONDITIONS TOR UC VALUE 500 400 10 12 24 4 75 150 -55~150 UNIT V V V A A A W ae ae Open collector Collector current-peak Base current Collector power dissipation Junction temperature Storage temperature Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4297 CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Transition frequency Output capacitance CONDITIONS IC=25mA; IB=0 IC=7A;IB=1.4A IC=7A;IB=1.4A VCB=500V ;IE=0 VEB=10V; IC=0 IC=7A ; VCE=4V IE=-1A ; VCE=12V VCB=10V;f=1MHz 10 10 MIN 400 0.5 1.3 100 100 30 MHz pF |I |I TYP. MAX UNIT V V V A A SYMBOL V(BR)CEO VCEsat VBEsat ICBO IEBO hFE fT COB Switching times ton tstg tf Fall time CHA IN Turn-on time Storage time E SEM NG OND IC TOR UC 105 1.0 3.0 0.5 |I |I |I s s s IC=7A;IB1=0.7A; IB2=-1.4A;RL=28.5 VCC=200V 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC4297 CHA IN E SEM NG OND IC TOR UC Fig.2 Outline dimensions 3 Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4297 CHA IN E SEM NG OND IC TOR UC 4 |
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